Pregled bibliografske jedinice broj: 449396
Pulsed anodic oxidation of GaAs for impurity-free interdiffusion og GaAs/AlGaAs quantum wells
Pulsed anodic oxidation of GaAs for impurity-free interdiffusion og GaAs/AlGaAs quantum wells // Surface and interface analysis, 29 (2000), 11; 754-760 doi:10.1002/1096-9918(200011)29:113.0.CO ; 2-D (međunarodna recenzija, članak, znanstveni)
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Naslov
Pulsed anodic oxidation of GaAs for impurity-free interdiffusion og GaAs/AlGaAs quantum wells
Autori
Deenapanray, P.N.K. ; Fu, L. ; Petravić, Mladen ; Jagadish, C. ; Gong, B. ; Lamb, R.N.
Izvornik
Surface and interface analysis (0142-2421) 29
(2000), 11;
754-760
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
anodic oxidation; GaAs; quantum well; interdiffusion; defects
Sažetak
The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0:3Ga0:7As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed. Copyright
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
