Pregled bibliografske jedinice broj: 449395
Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon
Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon // Applied physics letters, 78 (2001), 18; 2682-2684 doi:10.1063/1.1363689 (međunarodna recenzija, članak, znanstveni)
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Naslov
Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon
Autori
Stritzker, B. ; Petravić, Mladen ; Wong-Leung, J. ; Williams, J.S.
Izvornik
Applied physics letters (0003-6951) 78
(2001), 18;
2682-2684
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
gettering in Si; defects; interstitials
Sažetak
The selectivity of interstitial-based extended defects ~loops! and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing both vacancy- and interstitial-type defects is more complex, with Fe accumulation at all regions in the sample which contain defects, whether they are vacancy- or interstitial-like in character.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
