Naslov
Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon

Autori
Stritzker, B. ; Petravić, Mladen ; Wong-Leung, J. ; Williams, J.S.

Izvornik
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (0168-583X) 175-177 (2001); 154-158

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon; cavities; gettering; dislocations

Sažetak
Dislocations (of interstitial character) as well as cavities are known for their ability to getter impurities within Si. In order to determine the relative gettering strength we produced both dislocations and cavities at different depths within (1 0 0) Si. This was obtained by implantation and subsequent annealing of 3×1016 (40 keV H)/cm2 and 1×1016 (140 keV Si)/cm2 resulting in cavities and dislocations at depths of 400 nm and 200 nm, respectively. Fe or Cu was then implanted with a dose of 5×1013 atoms/cm2 and an energy of 35 keV. By selective implantation of different areas, all possible combinations of impurities, dislocations and cavities were obtained within one Si-sample. The results show, clearly, that Cu-impurities are gettered totally by cavities (or open-volume defects), even when dislocations are also present. In contrast, Fe-impurities, which are released from traps near the surface during annealing, are gettered by both interstitial-based dislocations and open-volume defects. Secondary ion mass spectrometry and transmission electron microscopy analyses reveal defect-Fe-impurity interactions at the different trap sites.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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