Naslov
Low energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si
(Low energy O2+ and N2+ beam-induced profile broadening effects in Si)

Autori
Deenapanray, P.N.K. ; Petravić, Mladen

Izvornik
Journal of vacuum science & technology. A. Vacuum, surfaces, and films (0734-2101) 19 (2001), 3; 893-898

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
SIMS ; profile broadening ; impurities in Si

Sažetak
The angular dependence of the profile broadening of Na, Li, and F during secondary ion mass spectrometry depth profiling was investigated in either n- or p- type Si using 10 keV O2 1 or N2 1 bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O2 1 bombardment below ; 27°, whereas a N2 1 beam provided better depth resolution. The N2 1 beam-induced profile broadening of Li was higher in the low resistivity n-type Si than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Si interface. Profiling below the critical angle for oxide formation resulted in the antisegregation of F into the SiO2 layer and gave sharper profiles. The decay length of F decreased exponentially with the surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N2 1 bombardment for the same impact angles.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA