Naslov
Influence of spin-on-glass doping on defect creation and impurity segregation in impurity-free disordered p-type GaAs

Autori
Deenapanray, P.N.K. ; Petravić, Mladen ; Jagadish, C. ; Krispin, M. ; Auret, F.D.

Izvornik
Journal of applied physics (0021-8979) 97 (2005), 3; 033524-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GaAs; defects; segregation

Sažetak
Impurity-free disordering sIFDd of uniformly doped p-GaAs epitaxial layers was achieved using either undoped or doped sGa or Pd spin-on-glass sSOGd in conjunction with rapid thermal annealing in the temperature range from 800 to 925 °C. Capacitance- voltage measurements showed a pronounced increase in the doping concentration sNAd in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in NA showed an Arrhenius-like dependence on the inverse of annealing temperature. On the other hand, NA did not change significantly for Ga-doped SOG. These changes can be explained by the relative injection of excess gallium vacancies sVGad during IFD of p-GaAs by the different SOG layers. Deep-level transient spectroscopy showed a corresponding increase in the concentration of a defect HA sEV+0.39 eVd, which can be attributed to Cu, in the undoped and P:SOG disordered p-GaAs layers, but not in the epilayers disordered by Ga:SOG.We have explained the increase in free carrier concentration by the segregation of Zn atoms towards the surface during the injection of VGa. The redistribution of Zn during disordering of buried marker layers in GaAs and Al0.6Ga0.4As using either undoped or Ga-doped SOG was verified by secondary-ion mass spectrometry.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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