Pregled bibliografske jedinice broj: 431375
Analysis of silicon amorphous/nanocrystalline multi-layers by GISAXS and GIWAXS
Analysis of silicon amorphous/nanocrystalline multi-layers by GISAXS and GIWAXS // SAS09 - Programme, Abstracts and Posters
Oxford, Ujedinjeno Kraljevstvo, 2009. str. 274-274 (poster, nije recenziran, sažetak, znanstveni)
CROSBI ID: 431375 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Analysis of silicon amorphous/nanocrystalline multi-layers by GISAXS and GIWAXS
Autori
Bernstorff, Sigrid ; Juraić, Krunoslav ; Gracin, Davor ; Meljanac, Daniel ; Gajović, Andreja ; Dubček, Pavo ; Čeh, Miran
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
SAS09 - Programme, Abstracts and Posters
/ - , 2009, 274-274
Skup
XIV International Conference on Small-Angle Scattering
Mjesto i datum
Oxford, Ujedinjeno Kraljevstvo, 13.09.2009. - 18.09.2009
Vrsta sudjelovanja
Poster
Vrsta recenzije
Nije recenziran
Ključne riječi
amorphous-nanocrystalline silicon; GISAXS; GIWAXS
Sažetak
Amorphous/nanocrystalline silicon thin film multilayers are promising structures for high efficient thin film solar cells. Their optical and opto-electrical properties and consequently efficiency are critically dependent on the nanocrystals size distribution and volume fraction. Samples deposited by plasma enhanced chemical vapour deposition were examined by Grazing Incidence Small Angle X-ray Scattering (GISAXS) and Grazing Incidence Wide Angle X-ray scattering (GIWAXS) at the SAXS beamline at the Synchrotron Elettra, Trieste, using a setup adjusted to study objects with sizes in the range from 1-100 nm The size and shape of the nanocrystals were calculated from the horizontal and vertical sections of 2D GISAXS pattern while the in-depth analysis of the samples was done by variation of the grazing incidence angle. The thickness of the layers was estimated from interference fringes. The size of the nanocrystals varied between 2 and 20 nm with a non-uniform in-depth distribution. The results agreed well with those obtained by high-resolution electron microscopy and Raman spectroscopy for smaller crystals and crystal fraction up to some 30 volume %. The disagreement for larger crystals and higher crystallinity was attributed to strain effects. The advantage and disadvantage of each of the methods used for the analysis of the actual structures are discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
098-0982886-2894 - Tanki filmovi legura silicija na prijelazu iz amorfne u uređenu strukturu (Gracin, Davor, MZOS ) ( CroRIS)
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( CroRIS)
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Davor Gracin
(autor)
Krunoslav Juraić
(autor)
Pavo Dubček
(autor)
Daniel Meljanac
(autor)
Andreja Gajović
(autor)