Naslov
Nanostructures for the next generation semiconductor devices

Autori
Capan, Ivana ; Dubček, Pavo ; Buljan, Maja ; Desnica, Uroš ; Slunjski, Robert ; Krstulović, Nikša ; Kregar, Zlatko ; Milošević, Slobodan ; Radić, Nikola ; Zorc, Hrvoje ; Betti, Tihomir ; Zulim, Ivan ; Pivac, Branko ;

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Zbronik sažetaka, Croatian-Japanese Workshop on Advanced Materials Science / Gumhalter, Branko ; Tadić, Tonči - Zagreb, 2009, 15-15

Skup
Croatian-Japanese Workshop on Advanced Materials Science

Mjesto i datum
Zagreb, Hrvatska, 29.06.2009. - 30.06.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Nije recenziran

Ključne riječi
nanostructures; nanotechnology; semiconductor devices

Sažetak
In this presentation we shall discuss motivation to study nanostructures and review our recent results obtained in collaboration between several groups. It is clear that properties of nanostructured materials give rise to enhanced properties of various devices. Therefore, it is of great importance to understand the basic properties of such materials. We believe that our expertise acquired in this filed will significantly contribute to the broad fund of knowledge that is a necessary prerequisite for a successful design and engineering of new generation of devices. We shall review several methods we are using to create nanostructures such as PVD on different substrates, magnetron sputtering of superlattices using different materials, and pulsed laser ablation in different atmospheres. We have shown that even macroscopic studies such as XRR provide a valuable information on self-assembly processes[1]. Another key question is self-organization. A full success of the superstructure method for the nanostructures formation is demonstrated although a lot of open questions remain in the spheres of structural decomposition, diffusion and self-assembly. It is clear that more detailed knowledge on the interplay of defects and self-assembly process is required. It will be shown that in specific cases a high degree of self-assembly can be obtained which means that an expensive lithography steps in processing could be avoided[2]. Further details on structural. optical and electric properties will be presented and discussed. [1] I. Kovačević, B. Pivac, P. Dubček, H. Zorc, N. Radić, S. Bernstorff, M. Campione, and A. Sassella, Appl. Surf. Sci., 253, 3034-3040 (2007). [2] B. Pivac, P. Dubček, I. Capan, I. Zulim, T. Betti, H. Zorc, S. Bernstorff, J. Nanosci. Nanotechnol., 9, 3853-3857 (2009). [3] M. Buljan, U.V. Desnica, M. Ivanda, N. Radić, P. Dubček, G. Dražić, K. Salamon, S. Bernstorff, V. Holy, Physical Review B, 79 (2009) , 3 ; 035310-035321.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

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