Naslov
Relaxation : crystallization processes in the Al-(early transiton metals) binary alloys

Autori
Car, Tihomir ; Radić, Nikola ; Ivkov, Jovica ; Tonejc, Antun

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
16th International Scientific Meeting on Vacuum Science and Technique : Book of Abstracts / Kovač, Janez ; Mozetič, Miran - Ljubljana : Društvo za vakuumsko tehniko Slovenije, 2009, 16-16

ISBN
978-961-90025-7-5

Skup
International Scientific Meeting on Vacuum Science and Technique (16 ; 2009)

Mjesto i datum
Bohinj, Slovenija, 04.06.2009. - 05.06.2009

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
Al-ETM alloys; amorphous thin films; crystallization

Sažetak
Structural relaxation and crystallization of the Al-(Nb, Mo, Ta, W) amorphous thin films under isochronal and isothermal condition was examined by continuous in situ electrical resistance measurements in vacuum. Films have been prepared by magnetron codeposition in the CMS 18 sputtering system onto various substrates held at room temperature and in a wide range of composition. Average film thickness was from 325 to 400 nm, depending on the film composition. The structure of the as-deposited and heated films was examined by the XRD. The adaptation of the JMA model to the non-isothermal kinetics was used for calculation of kinetic parameter n for both, relaxation and crystallization processes inside the same model. The calculated results indicated that the “ relaxation” kinetic parameter n in AlW amorphous thin films increases from approximately 0.4 to 0.8, while the “ crystallization” kinetic parameter increases from 1.5 to 2.8 with increasing of the aluminum content. For AlMo the “ relaxation” kinetic parameter n vary from 0.5 to 1.0 and the “ crystallization” kinetic parameter increases from 2.0 to 2.6. The results suggests that the relaxation of the Al-(Mo, W) amorphous structure changes interatomic distances and thus increases the chemical short range order (CSR). Due to sp-d hybridization the change in inter-atomic distances strongly affects the electrical properties of Al-(early transition metals) amorphous alloys. This view is strongly supported by the Hall effect results which were measured for Al-W thin films. Preliminary experimental results suggests that relatively high relaxation effects, as observed in the electrical resistivity, in the Al-W and Al-Mo have a maximum for the films with about 70-80 at% Al. Measurements on the Al-W amorphous films have shown that the relaxation effects decrease with an increase of the heating rate. For Al-Nb and Al-Ta amorphous films relaxation effects were not so clear, probably due to the remarkable low crystallization temperatures which are around or below 300OC.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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