Pregled bibliografske jedinice broj: 38273
EPR study of He implanted Si
EPR study of He implanted Si // Materials science and engineering B : solid state materials for advanced technology, 73 (2000), 1-2; 60-63 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 38273 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
EPR study of He implanted Si
Autori
Pivac, Branko ; Rakvin, Boris ; Tonini, R. ; Corni, F. ; Ottaviani, G.
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 73
(2000), 1-2;
60-63
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon; defects; implantation
Sažetak
We studied, with electron paramagnetic resonance, the influence of thermal treatment on defect evolution in helium implanted Czochralski single crystal silicon. It is shown that thermal treatment induces helium migration and capturing by vacancy clusters that transforms into pressurized bubbles. Such transformation produced strain field, that in turn affects dangling bond's lineshape in its vicinity. It is shown that strain field causes asymmetry of dangling bonds lineshape that is proportional to the strain field. This selects the electron paramagnetic resonance as a convenient technique for the monitoring of the early phases of bubbles formation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
