Pregled bibliografske jedinice broj: 377604
Surface Layer Morphology of Tungsten-Carbon Thin Films
Surface Layer Morphology of Tungsten-Carbon Thin Films // Proceedings of ICTF14 & RSD2008 / De Gryse, Roger ; Depla, Diederik ; Poelman, D. ; Mahieu, S. ; Leroy, W.P. ; Poelman, H. (ur.).
Ghent: University of Ghent, 2008. str. 299-299 (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 377604 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Surface Layer Morphology of Tungsten-Carbon Thin Films
Autori
Radić, Nikola ; Dubček, Pavo ; Jerčinović, Marko ; Ristić, Mira ; Musić, Svetozar ; Tonejc, Antun ; Bernstorff, Sigrid
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Proceedings of ICTF14 & RSD2008
/ De Gryse, Roger ; Depla, Diederik ; Poelman, D. ; Mahieu, S. ; Leroy, W.P. ; Poelman, H. - Ghent : University of Ghent, 2008, 299-299
ISBN
978 90 334 7347 0
Skup
14th International Conference on Thin Films
Mjesto i datum
Gent, Belgija, 17.11.2008. - 20.11.2008
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Thin films; surface morphology; tungsten-carbon
Sažetak
Transition metals carbides, and tungsten carbides in particular, exhibit many properties of interest to technology - high metling point, extreme hardness, low friction coefficient, chemical inertness, oxidation resistance, and good electric conductivity. The surface conditions of these materials are critical for some applications, and preparation processes are optimized to meet such requirements. Surface layer of W-C thin films prepared by reactive magnetron sputtering (argon + benzene) on monosilicon substrates has been examined by GISAXS, AFM and SEM methods. Preparation conditions have been varied in a wide range of deposition parameter values: benzene partial pressure in the 1-10% range, substrate temperature in steps RT, 200°C, and 400°C, and beside deposition onto substrates at floating potential a substrate bias of -70 V has been applied . It was found that WC1-x is a dominant carbide in all prepared films, with (111) preferential orientation in films deposited at room temperature. The surplus/unreacted carbon forms a fine dispersion of graphitic nanoparticles imbedded in the intergranular space. The W-C grainsize is determined at about 3 nm by the GISAXS method, with a very smooth surface - roughness about 0, 5 nm - and a very short height-height correlation length at the surface. The AFM examination show roughness depending upon the preparation conditions - from about 0, 5 nm on films prepared at low benzene partial pressure increasing towards a few nanometers when high benzene partial pressure was used. A corresponding average lateral grainsize has been estimated at 10-20 nm, revealing a scale-like morphology of the film surface. The SEM results corroborate the surface morphology, but reveal the subsurface film structure: at the top of the film there is a 10-20 nm thick layer which clearly differs from the main body of the film beneath. The "bulk" of the W-C films (about 200 nm thick) consist of columns 50-100 nm in diameter, atop of which there is a continuous segregated fine-structured layer. The observed structural discontinuity in the prepared W-C films inevitably influence their mechanical properties.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Kemija
POVEZANOST RADA
Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( CroRIS)
098-0982904-2952 - Sinteza i mikrostruktura metalnih oksida i oksidnih stakala (Ristić, Mira, MZOS ) ( CroRIS)
119-0982886-1009 - Struktura i svojstva posebnih nanomaterijala dobivenih suvremenim tehnikama (Tonejc, Antun, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb,
Prirodoslovno-matematički fakultet, Zagreb
Profili:
Pavo Dubček
(autor)
Marko Jerčinović
(autor)
Mira Ristić
(autor)
Antun Tonejc
(autor)
Svetozar Musić
(autor)
Nikola Radić
(autor)