Pregled bibliografske jedinice broj: 368110
DC conductivity of amorphous-nano-crystalline silicon thin films
DC conductivity of amorphous-nano-crystalline silicon thin films // 12th Joint Vacuun Conference 10th European Vacuum Conference 7th Annual Meeting of the German Vacuum Society Programme & Book of Abstracts / Sandor Bohatka (ur.).
Deberecen: REPS, 2008. str. 114-115 (poster, nije recenziran, sažetak, znanstveni)
CROSBI ID: 368110 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
DC conductivity of amorphous-nano-crystalline silicon thin films
Autori
Gracin, Davor ; Etlinger, Božidar ; Juraić, Krunoslav ; Gajović, Andreja ; Dubček, Pavo ; Bernstorff, Sigrid
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
12th Joint Vacuun Conference 10th European Vacuum Conference 7th Annual Meeting of the German Vacuum Society Programme & Book of Abstracts
/ Sandor Bohatka - Deberecen : REPS, 2008, 114-115
Skup
12th Joint Vacuun Conference 10th European Vacuum Conference 7th Annual Meeting of the German Vacuum Society
Mjesto i datum
Balatonalmádi, Mađarska, 22.09.2008. - 26.09.2008
Vrsta sudjelovanja
Poster
Vrsta recenzije
Nije recenziran
Ključne riječi
DC conductivity; structural properties; silicon thin films
Sažetak
We studied structural properties and direct current (DC) conductivity of nano-crystalline-amorphous Si films deposited by plasma enhanced chemical vapor deposition method using radio frequency (RF) gas discharge in silane - hydrogen gas mixture. The gas composition was varied in order to obtain variety of structural ordering, starting from pure amorphous to the high degree of nano-crystalline phase. The structural properties of samples were analyzed by Raman spectroscopy and grazing incidence x-ray scattering (GISAXS) while direct current (DC) conductivity was measured by standard methods. The crystal to amorphous volume fraction and average crystal sizes were estimated by analysing ratio of areas under corresponding transversal optical (TO) phonon peaks and TO peak position in Raman spectra. In that way estimated crystalline fraction was between 0 and 70% while average size of crystals varied from 2 to over 15 nm. However, the size distribution was wide i.e. the smaller and larger crystals were also present. The width of corresponding TO phonon peak and the ratio between transversal optical and transversal acoustical phonon peaks were used as additional measure of amorphous silicon network ordering. GISAXS showed strong signal that corresponds to "particles" with Gyro radii up to 20 nm. For lower crystal-to amorphous fraction, GISAXS corresponded to spherically symmetric "particles", or arbitrary shaped but statistically oriented particles which is consistent with model of isolated nano-crystals embedded in amorphous matrix. Samples with higher crystalline fraction had elongated "particles" that are larger when places closer to surface, which indicates columnar structure.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2894 - Tanki filmovi legura silicija na prijelazu iz amorfne u uređenu strukturu (Gracin, Davor, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Davor Gracin
(autor)
Krunoslav Juraić
(autor)
Božidar Etlinger
(autor)
Pavo Dubček
(autor)
Andreja Gajović
(autor)