Naslov
Raman line profile in polycrystalline silicon

Autori
Pivac, Branko ; Furić, Krešimir ; Desnica-Franković, Dunja Ida ; Borghesi, Alessandro ; Sassella, A.

Izvornik
Journal of applied physics (0021-8979) 86 (1999), 8; 4383-4386

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon; Raman spectroscopy

Sažetak
Raman spectroscopy is applied to the study of the structure of polycrystalline silicon films. The analysis of the transversal optical phonon Raman line shows its complex structure consisting of two dominant contributions, centered at about 519 and 517 cm-1 and attributed to two dominant groups of grains with different size. The profile of this Raman line is demonstrated to give deeper information about the film morphology, directly influenced by the deposition temperature in terms of the ratio of amorphous to crystalline phases, as well as the grain size distribution, and the film stress.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA