Naslov
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. - Zagreb : Denona, 2008, 73-78

ISBN
978-953-233-036-6

Skup
31st International Convention MIPRO

Mjesto i datum
Opatija, Hrvatska, 26.05.2008. - 30.05.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
bulk; body-tied; double-gate; FinFET; high-k; metal-gate; hafnium-oxide; titanium-nitride

Sažetak
Scaling beyond the 45 nm technology node requires high-κ dielectrics to suppress gate leakage current which, in turn, demands metal gates. In this paper, bulk FinFET with high-κ /metal gate stack, such as HfO2/TiN, and bulk FinFET with SiO2/poly-Si gate stack were analyzed and compared by 3D device simulation. The influence of using high-κ dielectric and metal gate on subthreshold and on-state device performance is examined. HfO2/TiN FinFET with the dielectric thickness of 2 nm has excellent performance, both in subthreshold and saturation (drain-induced barrier lowering of 29 mV/V, subthreshold swing of 91 mV/dec, drive current of 2670 μ A/μ m, and gate leakage under 0.02 A/cm2). A major limitation is the intrinsic switching speed of only 365 GHz, when compared to the conventional SiO2/poly-Si FinFET with the same dielectric thickness (1167 GHz).

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA