Pregled bibliografske jedinice broj: 342238
Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment
Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment // Applied Surface Science, 252 (2006), 10; 3413-3416 doi:10.1016/j.apsusc.2005.06.007 (međunarodna recenzija, članak, znanstveni)
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Naslov
Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment
Autori
Coleman, V.A. ; Petravić, Mladen ; Kim, K.-J. ; Kim, B. ; Li, G.
Izvornik
Applied Surface Science (0169-4332) 252
(2006), 10;
3413-3416
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN; NEXAFS; Nitrogen ion bombardment
Sažetak
The electronic structure of p-type GaN layers exposed to low- energy nitrogen ion bombardment was studied by near-edge Xray absorption fine-structure (NEXAFS) spectroscopy. It was found that ion bombardment lead to the creation of states lying below the nitrogen absorption edge which posses p-symmetry. These states are attributed to nitrogen interstitials with different local topologies created during ion bombardment. Furthermore, the NEXAFS spectra also shows the development of a strong p- resonance above the absorption edge with increasing incident nitrogen ion energy. This peak is attributed to the formation of molecular nitrogen at interstitial positions, arising from a build up of nitrogen ions on these sites.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
316-0982886-0542 - Istraživanje dušikovih defekata u složenim poluvodičkim spojevima (Petravić, Mladen, MZOS ) ( CroRIS)
Ustanove:
Filozofski fakultet, Rijeka
Profili:
Mladen Petravić
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus