Naslov
Integration of Junction FETs in Back-wafer Contacted Silicon-On-Glass Technology

Autori
Jovanović, Vladimir ; Shi, Lei ; Lorito, Gianpaolo ; Piccolo, Giulia ; Sarubbi, Francesco ; Nanver, Lis K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 / - , 2007

Skup
10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007

Mjesto i datum
Veldhoven, Nizozemska, 29.11.2007. - 30.11.2007

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
juction FET; back-wafer contacting; silicon-on-glass

Sažetak
Dual-gate junction field-effect transistors (JFETs) are integrated in a substrate transfer process called back-wafer contacted silicon-on- glass (SOG) technology. The silicon-on-BOX (buried-oxide) layer of an SOI wafer is transferred to glass and the JFET top- and bottom- gates are contacted on the top and bottom of this layer, respectively. For an efficient bottom-gate drive ultrashallow bottom-gate diodes are fabricated using either Schottky contacting or laser-annealing of shallow implants. Devices fabricated in silicon-on-BOX layers from 300 to 800 nm thick are investigated.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA