Pregled bibliografske jedinice broj: 320268
Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth
Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth // Journal of applied physics, 75 (1994), 7; 3586-3592 doi:10.1063/1.356993 (međunarodna recenzija, članak, znanstveni)
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Naslov
Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth
Autori
Pivac, Branko ; Furić, Krešimir ; Milun, Milorad ; Valla, Tonica ; Borghesi, Alessandro ; Sassella, Adele
Izvornik
Journal of applied physics (0021-8979) 75
(1994), 7;
3586-3592
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon carbide films ; crystallinity ; x-ray photoelectron spectroscopy ; Raman spectroscopy
Sažetak
Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere, were studied. Interaction of CO with molten silicon surface during growth produced SiC-like structures in a thin layer on the surface exposed to CO. Infrared spectroscopy results suggest that this layer is constituted of good quality SiC ; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1− xCx in the form of small crystallites mixed with C- and O-rich silicon. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus