Pregled bibliografske jedinice broj: 319400
SiC-like structures in edge-defined film-fed growth polysilicon ribbons
SiC-like structures in edge-defined film-fed growth polysilicon ribbons // Journal of Materials Science Letters, 9 (1990), 4; 397-399 doi:10.1007/BF00721010 (međunarodna recenzija, članak, znanstveni)
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Naslov
SiC-like structures in edge-defined film-fed growth polysilicon ribbons
Autori
Pivac, Branko ; Borghesi, A. ; Moscardini, M. ; Bottazzi, P. ; Desnica, Uroš
Izvornik
Journal of Materials Science Letters (0261-8028) 9
(1990), 4;
397-399
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
crystal growth from melt ; elemental semiconductors ; interstitials ; semiconductor growth ; silicon
Sažetak
The authors' studies have shown that during the growth of edge-defined film-fed ribbons under highly asymmetrical conditions and in an atmosphere with CO2 added, oxygen is diffused into the growing ribbon. Oxygen atoms further simulated creation of carbon and silicon self-interstitial aggregates which in turn acted as precursors for SiC phase formation. This gave rise to the characteristic peak at 797 cm-1 in the infrared absorbance spectrum. These clusters of carbon and silicon self-interstitials are not as stable as an SiC phase and therefore can be annealed during a low-temperature (650degrees) thermal treatment (10 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
