Pregled bibliografske jedinice broj: 319259
Donor-acceptor pair as opposed to anion antisite metastability in bulk semi-insulating GaAs: electron paramagnetic resonance and photoconductivity data analysis
Donor-acceptor pair as opposed to anion antisite metastability in bulk semi-insulating GaAs: electron paramagnetic resonance and photoconductivity data analysis // Japanese journal of applied physics, 31 (1992), 9; 2669-2672 doi:10.1143/JJAP.31.2669 (međunarodna recenzija, članak, znanstveni)
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Naslov
Donor-acceptor pair as opposed to anion antisite metastability in bulk semi-insulating GaAs: electron paramagnetic resonance and photoconductivity data analysis
Autori
Benchiguer, T. ; Mari, B. ; Schwab, C. ; Desnica, Uroš
Izvornik
Japanese journal of applied physics (0021-4922) 31
(1992), 9;
2669-2672
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
gallium arsenide ; III-V semiconductors ; paramagnetic resonance ; photoconductivity
Sažetak
The authors show the time evolution of the paramagnetic signals and photoconductivity in the same semi-insulating GaAs material during illumination below the band gap at low temperature can both be analyzed within a charge transfer model. This model involves the formation of metastable donor-acceptor pairs due to free carrier trapping by initially ionized defects. This result again questions whether the common link between EL2 and the AsGa-related defects needs a configuration-related metastability (28 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
