Naslov
Oxygen Non-Stoichiometry in Thermally Annealed and Hydrogen Implanted TiO2 Thin Films Observed by Raman Spectroscopy

Autori
Turković, Aleksandra ; Ivanda, Mile ; Tudorić-Ghemo, Josip ; Godinović, Nikola ; Sorić, Ivica

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of Symposium A 3 of the International Conference on Advanced Materials (ICAM 91) "Non-Stoichiometry in Semiconductors" / Bachmann, K.J. ; Hwang, H.-L. ; Schwab, C. - Amsterdam : London : New York (NY) : Tokyo : North-Holland, 1992, 307-313

ISBN
0-444-89355-5

Skup
Symposium A 3 of the International Conference on Advanced Materials "Non-Stoichiometry in Semiconductors"

Mjesto i datum
Strasbourg, Francuska, 27.05.1991. - 31.05.1991

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
Thin films; TiO2; Raman; implantation of protons

Sažetak
Oxygen non-stoichiometry has been induced into TiO2 thin films by two methods. The first one was performed by thermal annealing in non-oxydizing atmospheres (H2 and N2) and the second one by implantation of protons by the means of Van de Graff Machine (500 KeV). The thin film samples of TiO2 have been observed by Raman spectroscopy before and after post-deposition treatment and hydrogen implantation. The peak position and full width at half maximum for characteristical vibrational Raman modes have been analyzed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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