Pregled bibliografske jedinice broj: 318600
Raman study of damage processes in Si+-implanted GaAs
Raman study of damage processes in Si+-implanted GaAs // Journal of molecular structure, 348 (1995), 33-36 doi:10.1016/0022-2860(95)08582-G (međunarodna recenzija, članak, znanstveni)
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Naslov
Raman study of damage processes in Si+-implanted GaAs
Autori
Ivanda, Mile ; Desnica, Uroš V. ; Haynes, T. E. ; Hartmann, Ingo ; Kiefer, Wolfgang
Izvornik
Journal of molecular structure (0022-2860) 348
(1995);
33-36
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Raman spectroscopy ; ion implatation ; GaAs
Sažetak
Ion-induced damage in GaAs as a function of ion dose following'100 keV Si' implants has been investigated by Raman spectroscopy. A new approach for decomposition of Raman scattering intensity on to the crystalline and amorphous phase components has been used in analysis of Raman spectra. With increasing ion dose the following was observed: a) the widths of vibrational bands of a-phase signrfrcantly increase, while the width of the LO(T) phonon band of c-phase remains unchanged ; b) the longitudinal optical phonon band of cphase completely dissappears, while the transverse optical phonon mode evolves in to a new band of a-phase ; c) the wavenumbers of all vibrational bands of a- and c-phase shift to lower values by - 10-15 cm". A number of mechanisms possibly accountable for these shifts were analysed and evaluated.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- Chemical Abstracts
- The INSPEC Science Abstracts series
