Pregled bibliografske jedinice broj: 318596
Raman study of gallium arsenide thin films
Raman study of gallium arsenide thin films // Journal of Non-Crystalline Solids, 170 (1994), 3; 263-269 doi:10.1016/0022-3093(94)90055-8 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 318596 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Raman study of gallium arsenide thin films
Autori
Desnica-Franković, Ida Dunja ; Ivanda, Mile ; Kranjčec, M. ; Muri, R. ; Pinto, N.
Izvornik
Journal of Non-Crystalline Solids (0022-3093) 170
(1994), 3;
263-269
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Raman ; GaAs ; amorphous
Sažetak
The influence of deposition parameters on the structure of the gallium arsenide thin films was investigated by Raman scattering. The study was based on the analysis of the first-order Raman spectra which allows for a differentiation between the amorphous component and crystallites of various sizes. The amorphous and crystalline volume fractions were calculated from the integrated intensities of the deconvoluted peaks. It was demonstrated that a transition occurs from μ -GaAs to a-GaAs for particular plasma conditions and substrate temperature. As a function of the deposition parameters the entire range from mostly microcrystalline to completely amorphous films can be obtained. These properties were consistent with the results obtained on the same samples by transmission high-energy electron diffraction and conventional transmission electron microscopy.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb,
Geotehnički fakultet, Varaždin
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- Chemical Abstracts
- The INSPEC Science Abstracts series
