Pregled bibliografske jedinice broj: 318534
Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon
Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon // Physical review. B, Condensed matter, 46 (1992), 22; 14893-14896 doi:10.1103/PhysRevB.46.14893 (međunarodna recenzija, članak, znanstveni)
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Naslov
Raman-scattering measurements and fracton interpretation of vibrational properties of amorphous silicon
Autori
Ivanda, Mile
Izvornik
Physical review. B, Condensed matter (0163-1829) 46
(1992), 22;
14893-14896
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Raman spectroscopy ; amorphous materials ; fractal ; vibrations
Sažetak
Results of Raman scattering on a-Si:H films are presented at frequencies from 20 to 2500 cm-1. The frequency and temperature dependence of the Stokes/anti-Stokes ratio of Raman scattering intensity show the boson character of the observed broad background signal. It has been shown that the fractal model can be successfully applied to a-Si:H as well. The crossover frequency ω co1 between phonon and fracton regimes and the fractal exponent (σ +d-D)d̃ /D, obtained from the frequency dependence on the Raman scattering intensity, have been determined.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
