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Pregled bibliografske jedinice broj: 306227

Silicon nanostrucutres for memory devices


Pivac, Branko; Capan, Ivana; Zulim, Ivan; Betti, Tihomir; Janicki, Vesna; Zorc, Hrvoje; Dubček, Pavo; Bernstorff, Sigrid;
Silicon nanostrucutres for memory devices // Abstracts Book / Ali, Nasar (ur.).
Alvor: NanoSMat, 2007. (poster, međunarodna recenzija, sažetak, ostalo)


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Naslov
Silicon nanostrucutres for memory devices

Autori
Pivac, Branko ; Capan, Ivana ; Zulim, Ivan ; Betti, Tihomir ; Janicki, Vesna ; Zorc, Hrvoje ; Dubček, Pavo ; Bernstorff, Sigrid ;

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, ostalo

Izvornik
Abstracts Book / Ali, Nasar - Alvor : NanoSMat, 2007

Skup
2nd International Conference on Surfaces, Coatings and Nanostructured Materials

Mjesto i datum
Alvor, Portugal, 09.07.2007. - 11.07.2007

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
silicon; quantum dots; memory devices

Sažetak
Recently, Si and Ge nanocrystals (ncs) embedded in a silicon dioxide (SiO2) matrix have been widely studied for their luminescence and charge retention properties for integration as opto-electronic and microelectronic devices in complementary metal-oxide-semiconductor (CMOS) technology. As far as memories are concerned, a nc-layer located at a tunneling distance from the Si/SiO2 interface can be used as a floating gate in order to reduce the lateral charge loss limiting conventional flash memories. Samples were prepared by high-vacuum evaporation of a 3 nm thick tunneling SiO2 layer on a n-type silicon substrate with resistivity 10-50  cm, followed by evaporation of a 6 nm thick SiO layer. On top, a 20 nm control oxide was deposited. Upon subsequent thermal annealing in vacuum, Si ncs are formed. The structural properties of the Si ncs are studied by means of grazing incidence small and wide angle x-ray scattering. It is shown that Si nanostructures are formed which crystallinity, size and morphology depends on the annealing temperature. Aluminum electrodes for the front and back sides were evaporated, in order to investigate the charge retention of the samples by means of capacitance-voltage (CV) measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Brodogradnja



POVEZANOST RADA


Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
023-0982886-1612 - Napredni modeli procjene Sunčevog zračenja i primjena u FN pretvorbi energije

Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Ivan Zulim (autor)

Avatar Url Branko Pivac (autor)

Avatar Url Hrvoje Zorc (autor)

Avatar Url Ivana Capan (autor)

Avatar Url Pavo Dubček (autor)

Avatar Url Tihomir Betti (autor)

Avatar Url Vesna Janicki (autor)


Citiraj ovu publikaciju:

Pivac, Branko; Capan, Ivana; Zulim, Ivan; Betti, Tihomir; Janicki, Vesna; Zorc, Hrvoje; Dubček, Pavo; Bernstorff, Sigrid;
Silicon nanostrucutres for memory devices // Abstracts Book / Ali, Nasar (ur.).
Alvor: NanoSMat, 2007. (poster, međunarodna recenzija, sažetak, ostalo)
Pivac, B., Capan, I., Zulim, I., Betti, T., Janicki, V., Zorc, H., Dubček, P., Bernstorff, S. & (2007) Silicon nanostrucutres for memory devices. U: Ali, N. (ur.)Abstracts Book.
@article{article, author = {Pivac, Branko and Capan, Ivana and Zulim, Ivan and Betti, Tihomir and Janicki, Vesna and Zorc, Hrvoje and Dub\v{c}ek, Pavo and Bernstorff, Sigrid}, editor = {Ali, N.}, year = {2007}, pages = {325}, keywords = {silicon, quantum dots, memory devices}, title = {Silicon nanostrucutres for memory devices}, keyword = {silicon, quantum dots, memory devices}, publisher = {NanoSMat}, publisherplace = {Alvor, Portugal} }
@article{article, author = {Pivac, Branko and Capan, Ivana and Zulim, Ivan and Betti, Tihomir and Janicki, Vesna and Zorc, Hrvoje and Dub\v{c}ek, Pavo and Bernstorff, Sigrid}, editor = {Ali, N.}, year = {2007}, pages = {325}, keywords = {silicon, quantum dots, memory devices}, title = {Silicon nanostrucutres for memory devices}, keyword = {silicon, quantum dots, memory devices}, publisher = {NanoSMat}, publisherplace = {Alvor, Portugal} }




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