Pregled bibliografske jedinice broj: 306226
Nano Si Superlattices for the Next Generation Solar Cells
Nano Si Superlattices for the Next Generation Solar Cells // Abstracts Book : 2nd International Conference on Surfaces, Coatings and Nanostructured Materials / Ali, Nasar (ur.).
Alvor: NanoSMat, 2007. str. 236-236 (predavanje, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 306226 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Nano Si Superlattices for the Next Generation Solar Cells
Autori
Pivac, Branko ; Capan, Ivana ; Zulim, Ivan ; Betti, Tihomir ; Janicki, Vesna ; Zorc, Hrvoje ; Dubček, Pavo ; Bernstorff, Sigrid ;
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Abstracts Book : 2nd International Conference on Surfaces, Coatings and Nanostructured Materials
/ Ali, Nasar - Alvor : NanoSMat, 2007, 236-236
Skup
2nd International Conference on Surfaces, Coatings and Nanostructured Materials
Mjesto i datum
Alvor, Portugal, 09.07.2007. - 11.07.2007
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
SiOx ; quantum dots ; solar cells
Sažetak
One approach for silicon based next genration solar cells relies the production of suitable Si nanostructured objects in wide bandgap material. Present research on Si nanosize structures is focused on the Si nanocrystals prepared by sputtering of Si rich oxides and SiO2 multilayers on Si substrates. We present a study on amorphous SiO/SiO2 superlattice formation on Si substrate held at different elevated temperatures. Grazing-incidence small-angle X-ray scattering (GISAXS), X-ray reflectivity and photoluminescence were used to study such samples. From the 2D GISAXS pattern it is possible to determine the shape, size and inter-particle distance. Amorphous SiO/SiO2 superlattices were prepared by magnetron sputtering of 2nm thin films of SiO and SiO2 (10 layers each) from corresponding targets on silicon substrate. Rotation of the Si substrate during evaporation enables homogeneity of films over the whole substrate. After evaporation samples were annealed at 1050 C in different atmospheres. The analysis of the 2D GISAXS pattern has shown that some Si nanocrystals are already present in some samples deposited at elevated temperatures. Using a Guinier approximation, the inter-nanocrystal distance and the thickness of the nanocrystals have been obtained. A long range ordering of nanoparticles deposited at elevated temperatures are observed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Brodogradnja
POVEZANOST RADA
Projekti:
MZOS-098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
023-0982886-1612 - Napredni modeli procjene Sunčevog zračenja i primjena u FN pretvorbi energije
Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Institut "Ruđer Bošković", Zagreb
Profili:
Ivan Zulim
(autor)
Branko Pivac
(autor)
Pavo Dubček
(autor)
Hrvoje Zorc
(autor)
Ivana Capan
(autor)
Tihomir Betti
(autor)
Vesna Janicki
(autor)