Pregled bibliografske jedinice broj: 303545
"Boson" peak in Raman spectra of hydrogenated amorphous silicon
"Boson" peak in Raman spectra of hydrogenated amorphous silicon // Journal of Non-Crystaline Solids, 137-138 (1991), 1; 103-106 doi:10.1016/S0022-3093(05)80067-5 (međunarodna recenzija, članak, znanstveni)
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Naslov
"Boson" peak in Raman spectra of hydrogenated amorphous silicon
Autori
Ivanda, Mile ; Furić, Krešimir ; Gamulin, Ozren ; Gracin, Davor
Izvornik
Journal of Non-Crystaline Solids (0022-3093) 137-138
(1991), 1;
103-106
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
amorphous silicon ; Raman spectroscopy ; boson peak
Sažetak
Hydrogenated amorphous silicon films were prepared by a dc magnetron sputtering method. Broad bacground signal observed in Raman spectra near the excitation line which is recently attributed to the recombination of nonthermal electron with nonhermal holes was decomposed from the phonon bands. The Stokes/anti-Stokes ratio, depolarization ratio and the shape of the bacground signal have the characteristics typical for the non-continous structure of amorphous silicon, composed of the blobs of strongly conected silicon atoms placed around hydrogen clusters.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- Chemical Abstracts
- The INSPEC Science Abstracts series
