Cw laser crystallization of amorphous silicon: Thermal or athermal process

Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Peršin, Mirjana; Gracin, Davor

doi:10.1063/1.349052

Pregled bibliografske jedinice broj: 303517

Cw laser crystallization of amorphous silicon: Thermal or athermal process

Ivanda, Mile; Furić, Krešimir; Gamulin, Ozren; Peršin, Mirjana; Gracin, Davor

cw laser crystallization of amorphous silicon: Thermal or athermal process // Journal of applied physics, 70 (1991), 8; 4637-4639 doi:10.1063/1.349052 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 303517 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Cw laser crystallization of amorphous silicon: Thermal or athermal process

Autori
Ivanda, Mile ; Furić, Krešimir ; Gamulin, Ozren ; Peršin, Mirjana ; Gracin, Davor

Izvornik
Journal of applied physics (0021-8979) 70 (1991), 8; 4637-4639

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
amorphous silicon ; laser crystallization ; Raman spectroscopy

Sažetak
Hydrogenated amorphous silicon films have been deposited by DC magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of laser beam, film thickness, material of substrate and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermal induced process.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

Projekti:
1-03-066

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Davor Gracin (autor)