Pregled bibliografske jedinice broj: 299013
Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties
Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties // MIPRO 2007 30th Jubilee International Convention / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2007. str. 31-35 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 299013 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Porous Silicon Prepared on a Thin Epitaxial Silicon Layer: Structure and Optical properties
Autori
Balarin, Maja ; Gamulin, Ozren ; Ivanda, Mile ; Ristić, Mira ; Musić, Svetozar ; Furić, Krešimir
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
MIPRO 2007 30th Jubilee International Convention
/ Biljanović, Petar ; Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2007, 31-35
ISBN
978-953-233-032-8
Skup
MIPRO 2007: Microelectronics, Electronics and Electronic Technologies Conference
Mjesto i datum
Opatija, Hrvatska, 21.05.2007. - 25.05.2007
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Porous silicon; nanostructures; Raman and FT-IR spectroscopy; SEM images
Sažetak
Commercially available silicon-on-insulator (SOI) wafers, consisting of 45  m tick p-type (111) epitaxial layer grown on a thin 100 nm SiO2 layer on n-type silicon substrate were electrochemical etched to produce porous silicon (PSi) samples. At 50% concentration of 48% hydrofluoric acid (HF) in ethanol solution the micro- and nano-sized pores were obtained. The structural and the optical properties of prepared sample were investigated by Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). SEM images showed high density of micrometer sized pores. Nanometer sized structures were observed by the phonon confinement effects of the optical and acoustic phonon bands in the Raman spectra. The broadening of crystal silicon (c-Si) transversal optical TO( ) band at 520 cm-1, was observed in substrate sample. At the same time the wide transversal acoustical (TA)-like phonon band at 150 cm-1, that characterizes the short range confinement, also appeared in the same sample. FT-IR spectra exhibited numerous bands from Si-Hx and H-Si(Si3-nOn) groups. The sample also showed photoluminescence (PL) peak in the visible spectral range. The change in the intensity, width and the position of the PL peak showed strong sensitivity to the influence of different environment conditions such as air, vacuum and acetone.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( CroRIS)
098-0982904-2952 - Sinteza i mikrostruktura metalnih oksida i oksidnih stakala (Ristić, Mira, MZOS ) ( CroRIS)
108-1080134-3105 - Mehanizmi narušavanja strukture lipoproteina djelovanjem vanjskih čimbenika (Gamulin, Ozren, MZOS ) ( CroRIS)
108-1080399-0383 - Muški i ženski spolni sustav: razvoj, normalna histofiziologija i neplodnost (Ježek, Davor, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb,
Medicinski fakultet, Zagreb
Profili:
Ozren Gamulin
(autor)
Mile Ivanda
(autor)
Maja Balarin
(autor)
Mira Ristić
(autor)
Krešimir Furić
(autor)
Svetozar Musić
(autor)