Naslov
Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Autori
Kovačević, Ivana ; Pivac, Branko ; Dubček, Pavo ; Zorc, Hrvoje ; Radić, Nikola ; Bernstorff, Sigrid ; Campione, Mario ; Sassella, Adele ;

Izvornik
Applied Surface Science (0169-4332) 253 (2007), 6; 3034-3040

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge nanostructures; X-ray reflectivity; Ge islands; Atomic force microscopy

Sažetak
We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 8C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 8C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40  0.10 eV for such a process was calculated.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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