Naslov
Horizontal Current Bipolar Transistor and Fabrication Method

Autori
Suligoj, Tomislav ; Biljanović, Petar ; Wang, Kang L.

Broj patenta
US7038249 B2

Godina
2006

Datum patenta
2.5.2006

Nositelj prava
The Regents of the University of California, Zagreb, Los Angeles, Hrvatska

Sažetak
A bipolar transistor structure for use in integrated circuits where the active device is processed on the sidewall of an n-hill so that the surface footprint does not depend on the desired area of active device region (emitter area). This structure, which is referred to as a Horizontal Current Bipolar Transistor (HCBT), consumes a smaller area of chip surface than conventional devices, thereby enabling higher packing density of devices and/or the reduction of integrated circuit die size. The device is fabricated with a single polysilicon layer, without an epitaxial process, without demanding trench isolation technology, and with reduced thermal budget. Fabrication requires fewer etching processes and thermal oxidations than in conventional devices.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA