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Pregled bibliografske jedinice broj: 294749

JFET test structures for monitoring strain-enhanced mobility

Shi, Lei; Lorito, Gianpaolo; Jovanović, Vladimir; Fregonese, Sebastien; Nanver, Lis K.
JFET test structures for monitoring strain-enhanced mobility // Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Veldhoven, Nizozemska, 2006. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 294749 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
JFET test structures for monitoring strain-enhanced mobility

Autori
Shi, Lei ; Lorito, Gianpaolo ; Jovanović, Vladimir ; Fregonese, Sebastien ; Nanver, Lis K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 / - , 2006

Skup
9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006

Mjesto i datum
Veldhoven, Nizozemska, 23.11.2006. - 24.11.2006

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
differential transconductance; single-gate Junction Field-Effect Transistor (JFET); mobility; strained silicon

Sažetak
In this work, a novel method for characterizing the mobility enhancement in strained silicon layers is proposed. The idea is to use the electrical characteristics of a single-gate Junction Field-Effect Transistor (JFET) and, in particular, the relation between the differential transconductance in the linear operation mode and the carrier mobility in the strained channel. Firstly, the JFET test structure has been designed and, then, the efficacy of the above technique has been evaluated by means of Medici electrical simulations.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Citiraj ovu publikaciju:

Shi, Lei; Lorito, Gianpaolo; Jovanović, Vladimir; Fregonese, Sebastien; Nanver, Lis K.
JFET test structures for monitoring strain-enhanced mobility // Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Veldhoven, Nizozemska, 2006. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Shi, L., Lorito, G., Jovanović, V., Fregonese, S. & Nanver, L. (2006) JFET test structures for monitoring strain-enhanced mobility. U: Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006.
@article{article, author = {Shi, Lei and Lorito, Gianpaolo and Jovanovi\'{c}, Vladimir and Fregonese, Sebastien and Nanver, Lis K.}, year = {2006}, keywords = {differential transconductance, single-gate Junction Field-Effect Transistor (JFET), mobility, strained silicon}, title = {JFET test structures for monitoring strain-enhanced mobility}, keyword = {differential transconductance, single-gate Junction Field-Effect Transistor (JFET), mobility, strained silicon}, publisherplace = {Veldhoven, Nizozemska} }
@article{article, author = {Shi, Lei and Lorito, Gianpaolo and Jovanovi\'{c}, Vladimir and Fregonese, Sebastien and Nanver, Lis K.}, year = {2006}, keywords = {differential transconductance, single-gate Junction Field-Effect Transistor (JFET), mobility, strained silicon}, title = {JFET test structures for monitoring strain-enhanced mobility}, keyword = {differential transconductance, single-gate Junction Field-Effect Transistor (JFET), mobility, strained silicon}, publisherplace = {Veldhoven, Nizozemska} }

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