Naslov
Structure and Optical Properties of Porous Silicon Prepared on Thin Epitaxial Silicon Layer on Silicon Substrates

Autori
Balarin, Maja ; Gamulin, Ozren ; Ivanda, Mile ; Đerek, Vedran ; Čelan, Ozana ; Musić, Svetozar ; Ristić, Mira ; Furić, Krešimir

Izvornik
Journal of Molecular Structure (0022-2860) 834/836 (2007); 465-470

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
porous Si; silicon on insulator; IR ans Raman spectroscopy; SEM

Sažetak
Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 μ m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO_2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxial layer micro- and nano-pores of different sizes in dependence on HF concentration were obtained. The structural and optical properties of prepared samples were investigated by Raman spectroscopy, infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). SEM images showed high density of micrometer sized pores whose morphology and density depend on the HF concentration. Nanometer sized silicon structures were observed by phonon confinement effects of TO, TA phonon bands in the Raman spectra. The broadening of crystalline silicon (c-Si) vibrational band at 520 cm^-1, that indicates phonon confinement, increased with decreasing the HF concentration. At the same time the TA-like phonon vibrational band at 150 cm^-1, that characterizes the short range confinement, also appeared in the same samples. All samples showed photoluminescence (PL) peak in visible spectral range. The change in intensity and position of the PL peak showed strong sensitivity to the influence of different environment conditions ; air, vacuum and acetone.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

Napomena
Rad je prezentiran na skupu XXVIIIth European Congress on Molecular Spectroscopy Molecular Spectroscopy and Molecular Structure 2006 ; održanom od 03.– .08.09.2006.g., Istanbul, Turska ; Sevim Akyüz, Austin J. Barnes (ur.).

POVEZANOST RADA