Naslov
Defect structure examination of Sn-doped indium oxide (ITO)

Autori
Popović, Jasminka ; Tkalčec, Emilija ; Gržeta, Biserka ; Goebbert, Christian ; Ksenofontov, Vadim ; Takeda, Masuo

Izvornik
Zeitschrift für Kristallographie (0044-2968) 222 (2007), S26; 489-494

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
indium tin oxide (ITO); X-ray powder diffraction; Moessbauer spectroscopy; Rietveld method; fitting methods

Sažetak
Tin-doped indium oxide (ITO) samples with doping level up to 12.3 at% Sn were prepared by a sol-gel technique and characterised by X-ray powder diffraction as well with ^(119)Sn-Mössbauer spectroscopy. Diffraction patterns indicated that all samples were cubic, space group Ia-3, and isostructural with In_2O_3. Diffraction lines were broadened, the line broadening increased with tin content. The unit-cell parameter increased with tin doping level up to 7.8 at% Sn and decreased at higher levels. This behaviour of the unit-cell parameter indicated that the tin substitution for indium on B and D sites of the original In_2O_3 structure is non-uniform and depends on tin content. Rietveld structure refinement showed the presence of interstitial oxygen in the Sn-doped samples. The position of interstitial oxygen indicated the D site preference for tin at low tin doping level, and subsequent increase in the B site occupancy with the increase in tin content. ^(119)Sn-Mössbauer spectroscopy revealed that incorporated tin resided equally sites B and D for 7.8 at% Sn. Below that doping level the preference for tin to occupy D site was noticed, while for doping level higher than 7.8 at% Sn the B site was preferred.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

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