Pregled bibliografske jedinice broj: 267614
XRR and GISAXS study of silicon oxynitride films
XRR and GISAXS study of silicon oxynitride films // Applied surface science, 253 (2006), 1; 33-37 doi:10.1016/j.apsusc.2006.05.068 (međunarodna recenzija, članak, znanstveni)
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Naslov
XRR and GISAXS study of silicon oxynitride films
Autori
Bernstorff, S. ; Dubček, Pavo ; Pivac, Branko ; Kovačević, Ivana ; Sassella, A. ; Borghesi, A. ;
Izvornik
Applied surface science (0169-4332) 253
(2006), 1;
33-37
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon oxynitride films ; x-ray reflectivity ; small-angle X-ray scattering
Sažetak
Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiOxNyHz with 0.85<x<1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and (sphere)-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
