Pregled bibliografske jedinice broj: 263918
Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics
Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics // 42nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON MEMS AND NEMS / Vrtačnik, D. ; Amon, S. ; Šorli I. (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2006. str. 119-124 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 263918 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics
Autori
Perić, Mario ; Suligoj, Tomislav ; Biljanović, Petar ; Schulze, Joerg ; Eisele, Ignaz ; Thompson, Phillip E. ; Jernigan, Glenn
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
42nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON MEMS AND NEMS
/ Vrtačnik, D. ; Amon, S. ; Šorli I. - Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2006, 119-124
Skup
42nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICE AND MATERIALS AND THE WORKSHOP ON MEMS AND NEMS
Mjesto i datum
Strahinj, Slovenija, 13.09.2006. - 15.09.2006
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
vertical MOSFET; silicon-on-nothing
Sažetak
The scaling properties of a Vertical Fully Depleted Silicon-on-Nothing (VFDSONFET) structure are examined by means of device simulations. The short channel effects of the VFDSONFET with 80 nm channel length can be improved by reducing the buried dielectric thickness, silicon body thickness, and using a lower-k material as the buried dielectric. The silicon body thickness has the greatest effect on the short channel effect, resulting from the associated capacitance dominating over the buried dielectric capacitance. The drain field effect in the channel region near the source is analyzed, showing that the use of a lower-k buried dielectric localizes the field near the drain and results in a higher potential barrier near the source.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
