Pregled bibliografske jedinice broj: 249856
Properties of Lateral Bipolar Transistors in SiGe Technology
Properties of Lateral Bipolar Transistors in SiGe Technology // Proceedings of MIPRO 2006 / Biljanović, Skala (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2006. str. 68-71 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 249856 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Properties of Lateral Bipolar Transistors in SiGe Technology
Autori
Koričić, Marko ; Biljanović, Petar ; Suligoj, Tomislav ;
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MIPRO 2006
/ Biljanović, Skala - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2006, 68-71
Skup
29^th International Convention - MIPRO 2006
Mjesto i datum
Opatija, Hrvatska, 22.05.2006. - 26.05.2006
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
lateral bipolar transistors; vertical bipolar transistor; HCBT; silicon germanium base; cutoff frequency; maximum oscillation frequency; scaling
Sažetak
Properties of lateral bipolar transistors in SiGe technology are investigated using the 2D device simulation program MEDICI. High frequency performance is evaluated through cutoff (fT) and maximum oscillation frequency (fmax). It is shown that good properties of lateral transistors such as small parasitic elements are kept in SiGe technology resulting in high fmax while cutoff frequency is comparable to advanced vertical SiGe transistors. Scaling properties are analyzed by varying device geometry. It is shown that lithography dependant horizontal scaling will reduce parasitic elements. Lithography independent vertical scaling is possible as well, resulting in further decrease of parasitic elements and extremely high fmax which opens up the way for more aggressive intrinsic transistor profile scaling.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
