Naslov
Low Pressure Chemical Vapor Deposition of Different Silicon Nanostructures

Autori
Ivanda, Mile ; Gebavi, Hrvoje ; Ristić, Davor ; Furić, Krešimir ; Musić, Svetozar ; Ristić, Mira ; Žonja, Sanja ; Biljanović, Petar ; Gamulin, Ozren ; Balarin, Maja ; Montagna, M. ; Ferarri, M. ; Righini, G.C.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 29th International Convention MIPRO 2006 / Biljanović, Skala - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2006, 27-32

Skup
International Convention MIPRO 29 ; 2006)

Mjesto i datum
Opatija, Hrvatska, 22.05.2006. - 26.05.2006

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
LPCVD; sillicon nanocrystals; polysilicon; Raman spectroscopy; IR spectroscopy; SEM analysis

Sažetak
The low pressure chemical vapor deposition technique was used to deposit different silicon nanostructures by varying the working gas composition and substrate temperature. Silan gas diluted with argon was used to deposit silicon nanocrystals on different temperatures between 650 and 900 ^oC. The p-doping films of polystalline Si films were prepared by using BCl_3 vapor. The SiO_2 nanostructures were deposited by using the mixture of SiH_4+O_2 gasses and, in another case, of SiH_4+N_2O gasses. The structure and optical properties of such nanostructures were examined by Raman and IR spectroscopy, SEM analysis and electrical measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

POVEZANOST RADA