Pregled bibliografske jedinice broj: 249771
Structural Changes in GaAs Crystalline Compound Caused by Combined Ball Milling and Heat Treatment
Structural Changes in GaAs Crystalline Compound Caused by Combined Ball Milling and Heat Treatment // Conference Proccedings. 2^nd Croatian Congress on Microscopy with International Participation / Gajović, Srečko (ur.).
Topusko: Society for Electron Microscopy, 2006. str. 250-252 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 249771 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Structural Changes in GaAs Crystalline Compound Caused by Combined Ball Milling and Heat Treatment
Autori
Stubičar, Mirko ; Bermanec, Vladimir ; Stubičar, Nada ; Popović, Darko ; Marković, Radojka ; Krumes, Dragomir
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Conference Proccedings. 2^nd Croatian Congress on Microscopy with International Participation
/ Gajović, Srečko - Topusko : Society for Electron Microscopy, 2006, 250-252
Skup
2^nd Croatian Congress on Microscopy with International Participation
Mjesto i datum
Topusko, Hrvatska, 18.05.2006. - 21.05.2006
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
X-ray diffraction; GaAs compound; structural changes; high-energy ball milling; postannealing
Sažetak
X-ray diffraction technique was applied to register structural changes in gallium arsenide (GaAs) crystalline compound induced by combined a high-energy ball-milling and subsequent post-annealing treatments. During milling (up to 10 h) in air at room temperature the GaAs crystals disintegrate into two phases: one crystalline phase identified as an arsenic oxide (As_2O_3) and one amophous phase. During the subsequent annealing (up to 1h) in the temperature range 450-750 ˚ C, the amorphous phase transforms into gallium oxide (Ga_2O_3) phase, while (As_2O_3) evaporates and escapes from the solid milled sample. This study is interesting as a recycling path of GaAs convenient from the ecological aspect.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Geologija, Kemija
Napomena
ISBN 953-99339-1-9
POVEZANOST RADA
Ustanove:
Prirodoslovno-matematički fakultet, Zagreb,
Strojarski fakultet, Slavonski Brod
Profili:
Mirko Stubičar
(autor)
Nada Stubičar
(autor)
Vladimir Bermanec
(autor)
Dragomir Krumes
(autor)
Radojka Marković
(autor)