Pregled bibliografske jedinice broj: 236497
Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect
Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect // CAS 2004 Proceedings / Dascalu, Dan (ur.).
Bukurešt: Institute of Electrical and Electronics Engineers (IEEE), 2004. str. 355-358 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 236497 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect
Autori
Koričić, Marko ; Biljanović, Petar ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
CAS 2004 Proceedings
/ Dascalu, Dan - Bukurešt : Institute of Electrical and Electronics Engineers (IEEE), 2004, 355-358
Skup
2004 International Semiconductor Conference
Mjesto i datum
Sinaia, Rumunjska, 04.10.2004. - 06.10.2004
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
charge sharing; impact ionization; breakdown voltages; cut off frequency; HCBT
Sažetak
The observed improvement of BVCEO and fTxBVCEO product of Horizontal Current Bipolar Transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. It reduces the maximum electric field in the intrinsic transistor. A simple model is developed to physicaly explain improvement of the breakdown voltage. An optimization of HCBT structure with respect to the BVCEO and fTxBVCEO product is given by the simulation. BVCEO is increased by 23.6% while fT is reduced only by 6.3%, resulting in higher fTxBVCEO product.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
