Pregled bibliografske jedinice broj: 235382
GaN nanowire lasers with low lasing thresholds
GaN nanowire lasers with low lasing thresholds // Applied Physics Letters, 87 (2005) (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 235382 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
GaN nanowire lasers with low lasing thresholds
Autori
Gradečak, Silvija ; Qian, Fang ; Li, Yat ; Park, Hong Gyu ; Lieber, Charles M.
Izvornik
Applied Physics Letters (0003-6951) 87
(2005);
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
nanowires; GaN; lasing
Sažetak
We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar 11-20 direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry– Pérot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW/cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series