Pregled bibliografske jedinice broj: 205247
A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process
A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process // Electrochemical and solid-state letters, 8 (2005), 5; G125-G127 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 205247 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process
Autori
Suligoj, Tomislav ; Wang, Kang L.
Izvornik
Electrochemical and solid-state letters (1099-0062) 8
(2005), 5;
G125-G127
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
FinFET; Lateral Bipolar Transistors; BiCMOS; CMP
Sažetak
A novel isolation method of the silicon pillarlike structures, such as FinFET and lateral bipolar transistors, suitable for the future system-on-a-chip bipolar complementary metal oxide semiconductor (BiCMOS) integration is presented. The new structures are isolated by the deposition of low-temperature oxide after the pillar etching, followed by chemical mechanical polishing (CMP) and oxide etchback. A novel CMP setup is used, employing a rigid Teflon pad and the slurry composed of the gamma alumina powder diluted in deionized water with 2.5 wt % of KOH. The oxide above the 1.8 µ ; ; m high pillars is planarized with 96% efficiency resulting in a flat, scratch-free isolation oxide surface.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
0036001
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Tomislav Suligoj
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
