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Pregled bibliografske jedinice broj: 203792

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2


Desnica, Uroš; Dubček, Pavo; Salamon, Krešimir; Desnica-Franković, Ida-Dunja; Buljan, Maja; Bernstorff, Sigrid; Serincan, U.; Turan, Rasit
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 // Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 238 (2005), 1-4; 272-275 (međunarodna recenzija, članak, znanstveni)


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Naslov
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Autori
Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit

Izvornik
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms (0168-583X) 238 (2005), 1-4; 272-275

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge

Sažetak
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge- implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta=1000oC. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
0035012
0098020

Ustanove:
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Poveznice na cjeloviti tekst rada:

Pristup cjelovitom tekstu rada

Citiraj ovu publikaciju:

Desnica, Uroš; Dubček, Pavo; Salamon, Krešimir; Desnica-Franković, Ida-Dunja; Buljan, Maja; Bernstorff, Sigrid; Serincan, U.; Turan, Rasit
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 // Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 238 (2005), 1-4; 272-275 (međunarodna recenzija, članak, znanstveni)
Desnica, U., Dubček, P., Salamon, K., Desnica-Franković, I., Buljan, M., Bernstorff, S., Serincan, U. & Turan, R. (2005) The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2. Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 238 (1-4), 272-275.
@article{article, author = {Desnica, Uro\v{s} and Dub\v{c}ek, Pavo and Salamon, Kre\v{s}imir and Desnica-Frankovi\'{c}, Ida-Dunja and Buljan, Maja and Bernstorff, Sigrid and Serincan, U. and Turan, Rasit}, year = {2005}, pages = {272-275}, keywords = {nanocrystals, quantum dots, X-ray scattering, GISAXS, implantation, Ge}, journal = {Nuclear Instruments and Methods In Physics Research Section B-Beam Interactions With Materials And Atoms}, volume = {238}, number = {1-4}, issn = {0168-583X}, title = {The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2}, keyword = {nanocrystals, quantum dots, X-ray scattering, GISAXS, implantation, Ge} }
@article{article, author = {Desnica, Uro\v{s} and Dub\v{c}ek, Pavo and Salamon, Kre\v{s}imir and Desnica-Frankovi\'{c}, Ida-Dunja and Buljan, Maja and Bernstorff, Sigrid and Serincan, U. and Turan, Rasit}, year = {2005}, pages = {272-275}, keywords = {nanocrystals, quantum dots, X-ray scattering, GISAXS, implantation, Ge}, journal = {Nuclear Instruments and Methods In Physics Research Section B-Beam Interactions With Materials And Atoms}, volume = {238}, number = {1-4}, issn = {0168-583X}, title = {The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2}, keyword = {nanocrystals, quantum dots, X-ray scattering, GISAXS, implantation, Ge} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus





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