Pregled bibliografske jedinice broj: 203792
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2 // Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, 238 (2005), 1-4; 272-275 (međunarodna recenzija, članak, znanstveni)
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Naslov
The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2
Autori
Desnica, Uroš ; Dubček, Pavo ; Salamon, Krešimir ; Desnica-Franković, Ida-Dunja ; Buljan, Maja ; Bernstorff, Sigrid ; Serincan, U. ; Turan, Rasit
Izvornik
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms (0168-583X) 238
(2005), 1-4;
272-275
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge
Sažetak
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge- implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta=1000oC. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb
Profili:
Maja Mičetić
(autor)
Uroš Desnica
(autor)
Krešimir Salamon
(autor)
Pavo Dubček
(autor)
Ida-Dunja Desnica
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus