Pregled bibliografske jedinice broj: 201730
Studying of trap levels by the use of focused ion beams
Studying of trap levels by the use of focused ion beams // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 231 (2005), 486-490 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 201730 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Studying of trap levels by the use of focused ion beams
Autori
Medunić, Zvonko ; Pastuović, Željko ; Jakšić, Milko ; Skukan, Natko
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 231
(2005);
486-490
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
IBIC; TRIBIC; CdZnTe; trapping; temperature
Sažetak
We laterally irradiated fully depleted CdZnTe samples by a 5 MeV focused proton beam at low temperatures to create electron-hole pairs and fill traps. Trapped charge was then released on heating by thermal re-emission and thermally stimulated current (TSC) was recorded as a function of temperature between 100 and 300 K. We have shown in these experiments that it is possible to distinguish between electron and hole traps by doing the excitation in the vicinity of the appropriate electrode. In conjunction with the ion beam induced charge (IBIC) and time-resolved IBIC (TRIBIC) technique such experiments can be used to characterize semiconductor materials in a more detailed way.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
