Pregled bibliografske jedinice broj: 201717
Radiation damage microstructures in silicon and application in position sensitive charged particle detection
Radiation damage microstructures in silicon and application in position sensitive charged particle detection // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 231 (2005), 502-506 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 201717 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Radiation damage microstructures in silicon and application in position sensitive charged particle detection
Autori
Jakšić, Milko ; Medunić, Zvonko ; Bogovac, Mladen ; Skukan, Natko
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 231
(2005);
502-506
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
radiation damage; silicon detectors; IBIC; position sensitive detectors
Sažetak
Area selective irradiation using MeV ions having diff erent ranges has been performed in a nuclear microprobe to produce radiation damage microstructures in silicon photodiodes. IBIC (Ion Beam Induced Charge) technique has been used for on line monitoring of radiation damage produced by different fluences of He, Li and O ions of MeV energies. Three-dimensional patterning of radiation damage structures may be used for different applications. By creating a region of constant damage gradient in Si photodiode, position sensitive radiation detection has been demonstrated.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
