Pregled bibliografske jedinice broj: 190811
Radiative recombination in electron-irradiated GaP crystals
Radiative recombination in electron-irradiated GaP crystals // Journal of optoelectronics and advanced materials, 5 (2003), 3; 641-646 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 190811 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Radiative recombination in electron-irradiated GaP crystals
Autori
Gomonnai, A. V. ; Goyer, D. B. ; Goushcha, O. O. ; Azhniuk, Yu. M. ; Megela, I. G. ; Kranjčec, Mladen
Izvornik
Journal of optoelectronics and advanced materials (1454-4164) 5
(2003), 3;
641-646
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Irradiation; Recombination; Photoluminescence; Exciton; Annealing
Sažetak
Photoluminescence measurements of S- and Te-doped GaP crystals, irradiated with 10-MeV electrons, are reported. The observed quenching of green and red luminescence bands under irradiation and their recovery at subsequent isochronal annealing are discussed aiming to reveal the possible mechanisms of the relevant recombination centres transformation including vacancy-involved complexes and non-radiative recombination centres.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
