Pregled bibliografske jedinice broj: 172817
Resistivity Model of Phase Transformation of Amorphous Al78W22 Thin Films under Isothermal Conditions
Resistivity Model of Phase Transformation of Amorphous Al78W22 Thin Films under Isothermal Conditions // IVC-16 (16th International Vacuum Congress) ICSS-12 (12th International Conference on Solid Surfaces) NANO-8 (8th Int. Conference on Nanometer Scale Science and Technology) AIV-17 (17th Vacuum National Symposium) Book 2 - Poster Sessions / Sancrotti, Massimo (ur.).
Venecija: IUVSTA & Associazione Italiana del Vuoto, 2004. (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 172817 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Resistivity Model of Phase Transformation of Amorphous Al78W22 Thin Films under Isothermal Conditions
Autori
Car, Tihomir ; Radić, Nikola ; Ivkov, Jovica ; Tonejc, Antun
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
IVC-16 (16th International Vacuum Congress) ICSS-12 (12th International Conference on Solid Surfaces) NANO-8 (8th Int. Conference on Nanometer Scale Science and Technology) AIV-17 (17th Vacuum National Symposium) Book 2 - Poster Sessions
/ Sancrotti, Massimo - Venecija : IUVSTA & Associazione Italiana del Vuoto, 2004
Skup
IVC-16 (16th International Vacuum Congress) ICSS-12 (12th International Conference on Solid Surfaces) NANO-8 (8th Int. Conference on Nanometer Scale Science and Technology) AIV-17 (17th Vacuum National Symposium)
Mjesto i datum
Venecija, Italija, 28.06.2004. - 02.07.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Aluminum-tungsten; amorphous alloys; thin films; phase transformation
Sažetak
Phase transformation and crystallization kinetics of the amorphous Al78W22 thin films under isothermal conditions was examined by continuous in situ electrical resistance measurements. The sample preparation was performed by magnetron codeposition. The resistivity of the samples was monitored during isothermal annealing at 803, 813 and 823 K, respectively, i.e. at the temperatures where the crystalline phase starts to develop. The temperature dependence of the resistivity (T) was estimated from isochronal measure-ments while the volume fraction of crystalline phase (x, t) was established using a general two phase resistivity model for this system and estimated from isothermal measurements. Combinations of these two approaches were used for modeling of the resistivity variation during cooling cycles. The activation energy for crystallization and the reaction order were determined within the framework of the JMA theory. The results indicated that the crystalliza-tion mechanism in isothermal heating was diffusioncontrolled process with steadystate nucleation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
