Pregled bibliografske jedinice broj: 170411
Effects of Light Soaking on Amorphous Silicon Thin Films
Effects of Light Soaking on Amorphous Silicon Thin Films // 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Palais des Congres, Paris, France / J.-L.Bal, G.Silvestrini, A.Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm (ur.).
München: WIP-Munich, Sylveinsteinstr. 2, D-81369 München, 2004. (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Effects of Light Soaking on Amorphous Silicon Thin Films
Autori
Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Palais des Congres, Paris, France
/ J.-L.Bal, G.Silvestrini, A.Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm - München : WIP-Munich, Sylveinsteinstr. 2, D-81369 München, 2004
Skup
19th European Photovoltaic Solar Energy Conference
Mjesto i datum
Pariz, Francuska, 07.06.2004. - 11.06.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
a-Si; Defects; Light-Soaking
Sažetak
The effect of light soaking on a-Si:H films is well known as the Staebler-Wronski effect, though its complete mechanism is not yet clear. The effect of light soaking with UV light on defects creating deep levels influence of hydrogen presence on such defects in intrinsic a-Si:H films was studied. The defects were investigated by current deep level transient spectroscopy (I-DLTS) and infrared spectroscopy (IR) measurements. It is found that UV light caused minor Si-H bond-breaking and hydrogen redistribution affects present oxygen.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
