Pregled bibliografske jedinice broj: 1491
Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing
Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing // Journal of molecular structure, 410 (1997), 249-252 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1491 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Comparison of structural changes in amorphous silicon induced by thermal and cw laser annealing
Autori
Gamulin, Ozren ; Ivanda, Mile ; Desnica, Uroš ; Furić, Krešimir
Izvornik
Journal of molecular structure (0022-2860) 410
(1997);
249-252
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
amorphous silicon; annealing effects; Raman spectroscopy
Sažetak
Thermal and photo-induced annealing was performed on different samples of amorphous silicon. The structural changes were monitored by Raman spectroscopy by means of the frequency shift and change in width of the TO-like phonon band of a-Si. While thermal annealing leads to the expected increase of structural order with temperature, photo-induced annealing shows anomalous behaviour: an increase of disorder with light soaking. This effect is discussed in terms of structural rearrangements of atoms caused by photo-induced electronic transitions.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
