Pregled bibliografske jedinice broj: 1470
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3 // Materials science and engineering B : solid state materials for advanced technology, 43 (1997), 1-3; 176-180 (međunarodna recenzija, članak, znanstveni)
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Naslov
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3
Autori
Mertz, C. ; Kunzer, M. ; Šantić, Branko ; Kaufmann, U. ; Akasaki, I. ; Amano, H.
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 43
(1997), 1-3;
176-180
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN; excitons; photoluminescence
Sažetak
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus