Pregled bibliografske jedinice broj: 14527
Structural relaxation of amorphous silicon during thermal and cw laser annealing
Structural relaxation of amorphous silicon during thermal and cw laser annealing // Journal of non-crystalline solids, 230 (1998), B; 943-948 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 14527 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Structural relaxation of amorphous silicon during thermal and cw laser annealing
Autori
Gamulin, Ozren ; Ivanda, Mile ; Desnica, Uroš ; Furić, Krešimir
Izvornik
Journal of non-crystalline solids (0022-3093) 230
(1998), B;
943-948
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
amorphous silicon; boson peak; fractal model
Sažetak
Different amorphous silicon thin films were prepared by high energy ion bombardment of crystalline silicon (a-Si) and by magnetron sputtering deposition (a-Si:H and a-Si1− xCx:H). All samples were laser annealed and a-Si sample was thermally annealed. Structural changes were monitored by bandwidth and position of transverse optical (TO)-like vibrational band in Raman spectrum of amorphous silicon. They were compared with changes of broad background signal, recently interpreted as ‘ boson peak'. Correlation of structural and boson peak changes was explained by a fractal model.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
