Pregled bibliografske jedinice broj: 1274723
Bandgap Narrowing in Silicene Nanoribbons with Metal Edge Contacts
Bandgap Narrowing in Silicene Nanoribbons with Metal Edge Contacts // Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023. str. 189-194 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1274723 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Bandgap Narrowing in Silicene Nanoribbons with Metal Edge Contacts
Autori
Poljak, Mirko ; Matić, Mislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology)
/ Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023, 189-194
Skup
46th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2023) ; Microelectronics, Electronics and Electronic Technology (MEET 2023)
Mjesto i datum
Opatija, Hrvatska, 22.05.2023. - 26.05.2023
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
silicene, nanoribbon, quasi-one-dimensional, bandgap, transport gap, bandgap narrowing, metallization, quantum transport, NEGF, wide-band limit, edge contact
Sažetak
By employing atomistic quantum transport simulations we investigate the impact of metal edge contacts on the transport gap (ETG) of silicene nanoribbons (SiNR). Transmission and ETG are investigated for sub-5 nm-wide and sub-15 nm-long SiNRs for various metal-device interaction strengths. We find that metallization occurs in certain cases, especially in wider and shorter devices, which sets fundamental limits to device scaling of potential SiNRbased field effect transistors (FET). The findings are elaborated through analytical and numerical examples by discussing transmission and eigenvalue evolution with increasing metal-device interaction.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb